CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

发布时间：2020-04-06 09:43:38 浏览次数：702 作者：嘉泰姆

摘要：CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

CXMS5222M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.

产品特点 返回TOP91Q嘉泰姆

 30V/5.8A 91Q嘉泰姆

RDS(ON) =25mΩ@ VGS=10V, ID=5.8A 91Q嘉泰姆

RDS(ON) =28mΩ@ VGS=4.5V, ID=5A 91Q嘉泰姆

RDS(ON) =37mΩ@ VGS=2.5V, ID=4A 91Q嘉泰姆

 High Density Cell Design For Ultra Low On-Resistance 91Q嘉泰姆

 Subminiature surface mount package:SOT23-3L91Q嘉泰姆

应用范围 返回TOP91Q嘉泰姆

 Battery management 91Q嘉泰姆

 High speed switch 91Q嘉泰姆

 Low power DC to DC converter91Q嘉泰姆

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产品封装图 返回TOP91Q嘉泰姆

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电路原理图 返回TOP91Q嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)91Q嘉泰姆
Part Number91Q嘉泰姆	Mode91Q嘉泰姆	VDS(Max)91Q嘉泰姆	VGS91Q嘉泰姆	ID(Max)91Q嘉泰姆	RDS(on)91Q嘉泰姆	Application91Q嘉泰姆	Package91Q嘉泰姆
Part Number91Q嘉泰姆	Mode91Q嘉泰姆	VDS(Max)91Q嘉泰姆	VGS91Q嘉泰姆	ID(Max)91Q嘉泰姆	RDS(on)91Q嘉泰姆	Application91Q嘉泰姆	Package91Q嘉泰姆
CXMS521391Q嘉泰姆	N channel91Q嘉泰姆	20V91Q嘉泰姆	12V91Q嘉泰姆	5.2A91Q嘉泰姆	37mΩ91Q嘉泰姆	①②③④⑤⑥⑦⑧91Q嘉泰姆	SOT2391Q嘉泰姆
CXMS522091Q嘉泰姆	N channel91Q嘉泰姆	20V91Q嘉泰姆	8V91Q嘉泰姆	3A91Q嘉泰姆	22mΩ91Q嘉泰姆	①②③④⑤⑥⑦⑧91Q嘉泰姆	SOT23/SOT23-391Q嘉泰姆
CXMS5220-N91Q嘉泰姆	N channel91Q嘉泰姆	20V91Q嘉泰姆	12V91Q嘉泰姆	5.2A91Q嘉泰姆	29mΩ91Q嘉泰姆	①②③④⑤⑥⑦⑧91Q嘉泰姆	SOT2391Q嘉泰姆
CXMS522191Q嘉泰姆	Double N91Q嘉泰姆	20V91Q嘉泰姆	12V91Q嘉泰姆	6A91Q嘉泰姆	22mΩ91Q嘉泰姆	①②③④⑤⑥⑦⑧91Q嘉泰姆	SOP891Q嘉泰姆
CXMS522291Q嘉泰姆	N channel91Q嘉泰姆	30V91Q嘉泰姆	12V91Q嘉泰姆	5.8A91Q嘉泰姆	25mΩ91Q嘉泰姆	①②③④⑤⑥⑦⑧91Q嘉泰姆	SOT23/SOT23-391Q嘉泰姆
CXMS5222-N91Q嘉泰姆	N channel91Q嘉泰姆	30V91Q嘉泰姆	20V91Q嘉泰姆	4.4A91Q嘉泰姆	35mΩ91Q嘉泰姆	①②③④⑤⑥⑦⑧91Q嘉泰姆	SOT2391Q嘉泰姆
CXMS522391Q嘉泰姆	Double N91Q嘉泰姆	20V91Q嘉泰姆	12V91Q嘉泰姆	6A91Q嘉泰姆	21mΩ91Q嘉泰姆	①②③④⑤</span>91Q嘉泰姆	SOT23-6/ TSSOP891Q嘉泰姆
CXMS522491Q嘉泰姆	Double N91Q嘉泰姆	20V91Q嘉泰姆	12V91Q嘉泰姆	5A91Q嘉泰姆	19mΩ91Q嘉泰姆	①②③④⑤⑥⑦⑧91Q嘉泰姆	TSSOP8/SOT2691Q嘉泰姆
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection91Q嘉泰姆

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上一篇： CXMS5219SG Series Dual P-channel enhancement mode field-effect transistor, produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

下一篇： CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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a

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