CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

发布时间：2020-04-06 09:43:38 浏览次数：716 作者：嘉泰姆

摘要：CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

CXMS5222M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.

产品特点 返回TOPmYh嘉泰姆

 30V/5.8A mYh嘉泰姆

RDS(ON) =25mΩ@ VGS=10V, ID=5.8A mYh嘉泰姆

RDS(ON) =28mΩ@ VGS=4.5V, ID=5A mYh嘉泰姆

RDS(ON) =37mΩ@ VGS=2.5V, ID=4A mYh嘉泰姆

 High Density Cell Design For Ultra Low On-Resistance mYh嘉泰姆

 Subminiature surface mount package:SOT23-3LmYh嘉泰姆

应用范围 返回TOPmYh嘉泰姆

 Battery management mYh嘉泰姆

 High speed switch mYh嘉泰姆

 Low power DC to DC convertermYh嘉泰姆

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产品封装图 返回TOPmYh嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)mYh嘉泰姆
Part NumbermYh嘉泰姆	ModemYh嘉泰姆	VDS(Max)mYh嘉泰姆	VGSmYh嘉泰姆	ID(Max)mYh嘉泰姆	RDS(on)mYh嘉泰姆	ApplicationmYh嘉泰姆	PackagemYh嘉泰姆
Part NumbermYh嘉泰姆	ModemYh嘉泰姆	VDS(Max)mYh嘉泰姆	VGSmYh嘉泰姆	ID(Max)mYh嘉泰姆	RDS(on)mYh嘉泰姆	ApplicationmYh嘉泰姆	PackagemYh嘉泰姆
CXMS5213mYh嘉泰姆	N channelmYh嘉泰姆	20VmYh嘉泰姆	12VmYh嘉泰姆	5.2AmYh嘉泰姆	37mΩmYh嘉泰姆	①②③④⑤⑥⑦⑧mYh嘉泰姆	SOT23mYh嘉泰姆
CXMS5220mYh嘉泰姆	N channelmYh嘉泰姆	20VmYh嘉泰姆	8VmYh嘉泰姆	3AmYh嘉泰姆	22mΩmYh嘉泰姆	①②③④⑤⑥⑦⑧mYh嘉泰姆	SOT23/SOT23-3mYh嘉泰姆
CXMS5220-NmYh嘉泰姆	N channelmYh嘉泰姆	20VmYh嘉泰姆	12VmYh嘉泰姆	5.2AmYh嘉泰姆	29mΩmYh嘉泰姆	①②③④⑤⑥⑦⑧mYh嘉泰姆	SOT23mYh嘉泰姆
CXMS5221mYh嘉泰姆	Double NmYh嘉泰姆	20VmYh嘉泰姆	12VmYh嘉泰姆	6AmYh嘉泰姆	22mΩmYh嘉泰姆	①②③④⑤⑥⑦⑧mYh嘉泰姆	SOP8mYh嘉泰姆
CXMS5222mYh嘉泰姆	N channelmYh嘉泰姆	30VmYh嘉泰姆	12VmYh嘉泰姆	5.8AmYh嘉泰姆	25mΩmYh嘉泰姆	①②③④⑤⑥⑦⑧mYh嘉泰姆	SOT23/SOT23-3mYh嘉泰姆
CXMS5222-NmYh嘉泰姆	N channelmYh嘉泰姆	30VmYh嘉泰姆	20VmYh嘉泰姆	4.4AmYh嘉泰姆	35mΩmYh嘉泰姆	①②③④⑤⑥⑦⑧mYh嘉泰姆	SOT23mYh嘉泰姆
CXMS5223mYh嘉泰姆	Double NmYh嘉泰姆	20VmYh嘉泰姆	12VmYh嘉泰姆	6AmYh嘉泰姆	21mΩmYh嘉泰姆	①②③④⑤</span>mYh嘉泰姆	SOT23-6/ TSSOP8mYh嘉泰姆
CXMS5224mYh嘉泰姆	Double NmYh嘉泰姆	20VmYh嘉泰姆	12VmYh嘉泰姆	5AmYh嘉泰姆	19mΩmYh嘉泰姆	①②③④⑤⑥⑦⑧mYh嘉泰姆	TSSOP8/SOT26mYh嘉泰姆
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery ProtectionmYh嘉泰姆

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上一篇： CXMS5219SG Series Dual P-channel enhancement mode field-effect transistor, produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

下一篇： CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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a

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