CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

发布时间：2020-04-06 09:43:38 浏览次数：717 作者：嘉泰姆

摘要：CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

产品特点 返回TOP6cR嘉泰姆

z 20V/6A 6cR嘉泰姆

RDS(ON) =18mΩ@ VGS=4.5V,ID=6A 6cR嘉泰姆

RDS(ON) =19mΩ@ VGS=3.85V,ID=5A 6cR嘉泰姆

z High Density Cell Design For Ultra Low On-Resistance 6cR嘉泰姆

z Surface mount package：SOP8 z ESD Protected: 3000 V6cR嘉泰姆

应用范围 返回TOP6cR嘉泰姆

z Battery management 6cR嘉泰姆

z power management 6cR嘉泰姆

z Portable equipment 6cR嘉泰姆

z Low power DC to DC converter. 6cR嘉泰姆

z Load switch z LCD adapter6cR嘉泰姆

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产品封装图 返回TOP6cR嘉泰姆

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电路原理图 返回TOP6cR嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)6cR嘉泰姆
Part Number6cR嘉泰姆	Mode6cR嘉泰姆	VDS(Max)6cR嘉泰姆	VGS6cR嘉泰姆	ID(Max)6cR嘉泰姆	RDS(on)6cR嘉泰姆	Application6cR嘉泰姆	Package6cR嘉泰姆
Part Number6cR嘉泰姆	Mode6cR嘉泰姆	VDS(Max)6cR嘉泰姆	VGS6cR嘉泰姆	ID(Max)6cR嘉泰姆	RDS(on)6cR嘉泰姆	Application6cR嘉泰姆	Package6cR嘉泰姆
CXMS52136cR嘉泰姆	N channel6cR嘉泰姆	20V6cR嘉泰姆	12V6cR嘉泰姆	5.2A6cR嘉泰姆	37mΩ6cR嘉泰姆	①②③④⑤⑥⑦⑧6cR嘉泰姆	SOT236cR嘉泰姆
CXMS52206cR嘉泰姆	N channel6cR嘉泰姆	20V6cR嘉泰姆	8V6cR嘉泰姆	3A6cR嘉泰姆	22mΩ6cR嘉泰姆	①②③④⑤⑥⑦⑧6cR嘉泰姆	SOT23/SOT23-36cR嘉泰姆
CXMS5220-N6cR嘉泰姆	N channel6cR嘉泰姆	20V6cR嘉泰姆	12V6cR嘉泰姆	5.2A6cR嘉泰姆	29mΩ6cR嘉泰姆	①②③④⑤⑥⑦⑧6cR嘉泰姆	SOT236cR嘉泰姆
CXMS52216cR嘉泰姆	Double N6cR嘉泰姆	20V6cR嘉泰姆	12V6cR嘉泰姆	6A6cR嘉泰姆	22mΩ6cR嘉泰姆	①②③④⑤⑥⑦⑧6cR嘉泰姆	SOP86cR嘉泰姆
CXMS52226cR嘉泰姆	N channel6cR嘉泰姆	30V6cR嘉泰姆	12V6cR嘉泰姆	5.8A6cR嘉泰姆	25mΩ6cR嘉泰姆	①②③④⑤⑥⑦⑧6cR嘉泰姆	SOT23/SOT23-36cR嘉泰姆
CXMS5222-N6cR嘉泰姆	N channel6cR嘉泰姆	30V6cR嘉泰姆	20V6cR嘉泰姆	4.4A6cR嘉泰姆	35mΩ6cR嘉泰姆	①②③④⑤⑥⑦⑧6cR嘉泰姆	SOT236cR嘉泰姆
CXMS52236cR嘉泰姆	Double N6cR嘉泰姆	20V6cR嘉泰姆	12V6cR嘉泰姆	6A6cR嘉泰姆	21mΩ6cR嘉泰姆	①②③④⑤</span>6cR嘉泰姆	SOT23-6/ TSSOP86cR嘉泰姆
CXMS52246cR嘉泰姆	Double N6cR嘉泰姆	20V6cR嘉泰姆	12V6cR嘉泰姆	5A6cR嘉泰姆	19mΩ6cR嘉泰姆	①②③④⑤⑥⑦⑧6cR嘉泰姆	TSSOP8/SOT266cR嘉泰姆
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection6cR嘉泰姆

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CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

目录

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

目录

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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