The HM35N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

nterchange-newline"> Description
The HM35N03D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =35A
RDS(ON) < 5.5mΩ @ VGS=10V
RDS(ON) < 9.5mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Secondary side synchronous rectifier
● High side switch in POL DC/DC converter
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