中文
EnglishThe HM2N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
erchange-newline">Description D
The uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 100V,ID = 2A
RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
G
S
Schematic diagram
Marking and pin assignment
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
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