The HM60N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge HM60N10D

发布时间:2020-04-06 09:43:38 浏览次数:697 作者:oumao18 来源:嘉泰姆

nterchange-newline"> Description
The HM60N10D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.General Features
● VDS = 100V,ID =60A
RDS(ON) <16mΩ @ VGS=12.6V
● Special designed for convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation
Schematic diagram
Marking and pin assignmentApplication
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED

Ps2嘉泰姆

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