100V N-Channel Enhancement Mode MOSFET CX15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology

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The CX15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology.The high density process is especially able to minize on-state resistance.These devices are.especially suited for low voltage application power management DC-DC converters.

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100V/15 A, RDS(ON)=80.0mΩ (typ.)@VGS= 10VBgA嘉泰姆

100V/8A,RDS(ON)=115m Ω(typ.)@VGS= 4.5V BgA嘉泰姆

Super high design for extremely low RDS(ON) BgA嘉泰姆

Exceptional on-resistance and Maximum DC current capability BgA嘉泰姆

Full RoHS complianceBgA嘉泰姆

SOP8 andTO252 package designBgA嘉泰姆

100% UIS Tested BgA嘉泰姆

 100% Rg testedBgA嘉泰姆

   应用范围 返回TOPBgA嘉泰姆

Power Management BgA嘉泰姆

DC/DC Converter BgA嘉泰姆

Load Switch
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