Single P-Channel, -30V, -4.6A, Power MOSFET CXMS5176 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

发布时间：2020-04-06 09:43:38 浏览次数：703 作者：嘉泰姆

摘要：Single P-Channel, -30V, -4.6A, Power MOSFET CXMS5176 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

The CXMS5176 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize onstate resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.

产品特点 返回TOPBQz嘉泰姆

 Trench Technology BQz嘉泰姆

 Supper high density cell design BQz嘉泰姆

 Excellent ON resistance for higher DC current BQz嘉泰姆

 Small package SOT-23-3LBQz嘉泰姆

应用范围 返回TOPBQz嘉泰姆

 Power Management in Note book BQz嘉泰姆

 Portable Equipment BQz嘉泰姆

 Battery Powered System BQz嘉泰姆

 DC/DC Converter BQz嘉泰姆

 Load SwitchBQz嘉泰姆

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场效应晶体管 P沟道MOS管</td>
Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		Size
			(V)	(V)	(V)	(Ω)	(A)		(mm)(L×W)
CXMS5151	P	1	-20	±8	-1	0.11	-1.4	SOT-323	2.1 x 2.3
CXMS5152	P	1	-12	±12	-0.9	0.022	-5.1	DFN2020-6L	2.0 x 2.0
CXMS5153	P	1	-12	±8	-0.9	0.031	-3.5	SOT-23	2.9 x 2.4
CXMS5154	P	1	-12	±8	-1	0.015	-7.4	DFN2020-6L	2.0 x 2.0
CXMS5155	P	1	-12	±8	-0.9	0.08	-1.5	SOT-323	2.1 x 2.3
CXMS5156	P+Diode	1	-20	±8	-0.8	-	-2.9	DFN3020-8L	3.0 x 2.0
CXMS5156B	P+Diode	1	-20	±8	-0.8	-	-2.7	DFN3020-8L	3.0 x 2.0
CXMS5157	P+Diode	1	-20	±8	-1	0.09	-3	DFN2020-6L	2.0 x 2.0
CXMS5158D	P	1	-20	±12	-1	0.042	-4	DFN3030-8L	3.0 x 3.0
CXMS5159	P	1	-20	±8	-0.9	0.05	-4.1	DFN2020-6L	2.0 x 2.0
CXMS5160	P	1	-20	±8	-0.8	0.081	-2.2	SOT-23	2.9 x 2.4
CXMS5161	P	1	-20	±5	-0.9	0.48	-0.62	SOT-523	1.6 x 1.6
CXMS5162	P	1	-20	±12	-1	0.056	-2.9	SOT-23	2.9 x 2.4
CXMS5163	P	1	-20	±5	-0.8	0.495	-0.6	SOT-723	1.2 x 1.2
CXMS5164	P	1	-20	±12	-1	0.047	-3.3	SOT-23-6L	2.9 x 2.8
CXMS5165	P	1	-20	±12	-1	0.096	-2.2	SOT-23	2.9 x 2.4
CXMS5166	P	1	-20	±5	-0.9	-	-0.51	DFN1006-3L	1.0 x 0.6
CXMS5166B	P	1	-20	±5	-0.9	0.44	-0.51	DFN1006-3L	1.0 x 0.6
CXMS5167	P	1	-20	±8	-1	0.017	-6.2	DFN2020-6L	2.0 x 2.0
CXMS5168	P	1	-20	±12	-1	0.043	-4	SOT-23-3L	2.9 x 2.8
CXMS5169	P	1	-20	±12	-1	0.043	-3.2	SOT-23	2.9 x 2.4
CXMS5170	P	1	-20	±8	-1	0.081	-2.4	SOT-23	2.9 x 2.4
CXMS5171	P	1	-20	±8	-1	0.052	-3.5	SOT-23-3L	2.9 x 2.8
CXMS5171A	P	1	-20	±12	-1	0.052	-3.5	SOT-23-3L	2.9 x 2.8
CXMS5172	P	1	-30	±20	-2.5	0.079	-3.8	SOP-8L	4.9 x 6.0
CXMS5173	P	1	-30	±20	-2.5	0.083	-4.1	SOT-23-3L	2.9 x 2.8
CXMS5174	P	1	-30	±20	-2.5	0.08	-2.9	SOT-23	2.9 x 2.4
CXMS5175	P	1	-30	±20	-2.5	0.077	-3.1	SOT-23	2.9 x 2.4
CXMS5176	P	1	-30	±12	-1.5	0.043	-4.6	SOT-23-3L	2.9 x 2.8
CXMS5177	P	1	-30	±20	-3	0.053	-3.7	SOT-23-3L	2.9 x 2.8
CXMS5178	Dual P	2	-30	±12	-1.4	0.045	-5.6	SOP-8L	4.9 x 6.0
CXMS5179	Dual P	2	-30	±20	-3	0.053	-5.5	SOP-8L	4.9 x 6.0
CXMS5180	P	1	-50	±20	-2	3.5	-0.2	SOT-23	2.9 x 2.4
CXMS5181	P	1	-20	±12	-1	0.025	-5.7	SOT-23-3	2.9 x 2.8
CXMS5182	P	1	-30	±20	-3	0.053	-5.5	SOP-8L	4.9 x 6.0
CXMS5182A	P	1	-30	±20	-3	0.043	-5.4	SOP-8L	4.9 x 6.0
CXMS5183	Dual P	2	-20	±8	-1	0.09	-3	DFN2020-6L	2.0 x 2.0
CXMS5184	Dual P	2	-20	±12	-1	0.075	-3.1	DFN2020-6L	2.0 x 2.0
CXMS5185	Dual P	2	-20	±12	-1	0.052	-3.7	DFN2020-6L	2.0 x 2.0
CXMS5186	Dual P	2	-20	±6	-0.9	0.55	-0.56	SOT-563	1.6 x 1.6
CXMS5187	Dual P	2	-20	±12	-2.5	0.07	-3.6	SOT-23-6L	2.9 x 2.8
CXMS5188	Dual P	2	-20	±12	-2.5	0.07	-4.6	SOP-8L	4.9 x 6.0
CXMS5189	Dual P	2	-20	±10	-1	0.08	-3.3	DFN2020-6L	2.0 x 2.0
CXMS5190	Dual P	2	-30	±20	-2.5	0.07	-3.8	SOP-8L	4.9 x 6.0

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上一篇： Single P-Channel, -30V, -3.1A, Power MOSFET CXMS5175 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

下一篇： Single P-Channel, -30 V, -4.4A,Power MOSFET CXMS5177 uses advanced trench technology to provide excellent RDS(ON) with low gate charge

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Single P-Channel, -30V, -4.6A, Power MOSFET CXMS5176 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

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Single P-Channel, -30V, -4.6A, Power MOSFET CXMS5176 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

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