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English热销内存系列
| 说明 | 型号 | 品牌 | 数量 | 单价 | 货期 |
| DDR2 32Mx16 PC800 lead free, halogen free | K4T51163QG-HCE7 | Samsung | 10000 | 11.0214 | 1 day |
| DDR2 128Mx8 PC800 | MT47H128M8CF-25:H | Micron | 10000 | 14.287 | 1 day |
| DDR2 64Mx16 PC667 Pb Free | MT47H64M16HR-3 | Micron | 2000 | 0 | 2 days |
| DDR2 64Mx8 PC667 | HY5PS12821CFP-Y5-C | Hynix | 5760 | 6.123 | 1 day |
| DDR 64Mx8 PC400 Pb Free | MT46V64M8P-5B:F | Micron | 20000 | 9.3886 | Stock HK |
| DDR 32Mx16 PC400 TSOP Pb Free | MT46V32M16P-5B:F | Micron | 5000 | 12.246 | 1 day |
| DDR 16Mx16 PC400 lead free, halogen free | K4H561638J-LCCC | Samsung | 4000 | 0 | 2 days |
| DDR 16Mx16 PC400 Pb Free | MT46V16M16P-5B:K | Micron | 14000 | 9.3886 | 1 day |
| DDR 32Mx16 PC333 CL2.5 TSOP Pb Free | MT46V32M16P-6T:F | Micron | 2000 | 17.1444 | 1 day |
| Mobile SD 32Mx16 133MHz Ind Temp Low Power | K4M51163PG-BG75 | Samsung | 3840 | 0 | 2 days |
| SD 32Mx16-75 Pb Free 133MHz | MT48LC32M16A2P-75:C | Micron | 6000 | 61.23 | 3 days |
| SD 16Mx16 PC133 Pb Free Ind Temp | MT48LC16M16A2P-75IT:D | Micron | 5000 | 17.1444 | 1 day |
| SD 16Mx16 PC133 Pb Free | MT48LC16M16A2P-75:D | Micron | 10000 | 13.0624 | 2 days |
| SD 16Mx16 PC133 Pb Free CL2 | MT48LC16M16A2P-7E:D | Micron | 3000 | 15.1034 | booking |
| SD 8Mx16-6 PC166 Pb Free | MT48LC8M16A2P-6A:G | Micron | 6000 | 9.7968 | 1 day |
| SD 8Mx16-7E 133MHz CL2 Pb Free | MT48LC8M16A2P-7E:G | Micron | 2000 | 11.0214 | 1 day |
| SD 8Mx16 PC133 Pb Free | MT48LC8M16A2P-75:G | Micron | 8000 | 12.246 | 4 days |
| SD 4Mx32-6 166MHz | MT48LC4M32B2P-6:G | Micron | 10000 | 16.328 | 1 day |
| SD 4Mx16-6 166MHz Pb Free | K4S641632K-UC60 | Samsung | 2880 | 12.246 | 1 day |
| SD 4Mx16-75 PC133 Pb Free | MT48LC4M16A2P-75:G | Micron | 4000 | 8.5722 | Stock HK |
| SD 4Mx16-75 PC133 Pb Free | MT48LC4M16A2P-75IT:G | Micron | 20000 | 0 | booking |
| 256G bit Nand Flash MLC | MT29F256G08CJAAAWP:A | Micron | 4000 | 261.248 | 1 day |
| 256G bit Nand Flash MLC | MT29F256G08CMCABH2-10R:A | Micron | 5000 | 0 | booking |
| 256G bit Nand Flash | MT29F256G08EJAAAWP:A | Micron | 3000 | 122.46 | 1 day |
| 128G bit Nand Flash MLC | JS29F16B08CCME3 | Intel | 5000 | 0 | 1 day |
| 128G bit Nand Flash TLC 25nm | MT29F128G08EFAAAWP:A | Micron | 4000 | 63.6792 | 1 day |
| 128G bit Nand Flash MLC | JS29F16B08JAMD2 | Intel | 10000 | 96.3352 | Stock HK |
| 128G bit Nand Flash MLC | MT29F128G08CJABAWP:B | Micron | 0 | 0 | N/A |
| 128G bit Nand Flash MLC 25nm | MT29F128G08CFAAAWP:A | Micron | 6000 | 108.5812 | 3 days |
| 64G bit Nand Flash Wafer | MT29F64G08CBABAL84A3WC1 | Micron | 50000 | 36.738 | 2 days |
| 64G bit Nand Flash MLC 25nm | MT29F64G08CBAAAWP:A | Micron | 6000 | 51.8414 | 2 days |
| 64G bit Nand Flash MLC 20NM | MT29F64G08CBABAWP:B | Micron | 10000 | 42.4528 | Stock HK |
| 64G bit Nand Flash MLC VLGA | H27UCG8T2MYR-BC | Hynix | 5760 | 40.0036 | Stock HK |
| 64G bit Nand Flash MLC VLGA | H27UCG8T2BYR-BC | Hynix | 5760 | 0 | 1 day |
| 64G bit Nand Flash MLC | H27UCG8T2ATR-BC | Hynix | 2880 | 43.6774 | Stock HK |
| 64G bit Nand Flash MLC TSOP | H27UCG8U5ATR-BC | Hynix | 5000 | 40.0036 | 1 day |
| 64G bit Nand Flash 8Gx8 MLC | K9LCG08U0A-SCB0 | Samsung | 960 | 0 | 2 days |
| 64G bit Nand Flash 8Gx8 MLC | K9LCG08U0B-SCB0 | Samsung | 5760 | 44.0856 | 1 day |
| 64G bit Nand Flash 8Gx8 SLC | K9NCG08U5M-PCK0 | Samsung | 1000 | 612.3 | 3 days |
| 64G bit Nand Flash TLC 25NM | MT29F64G08EBAAAWP:A | Micron | 10000 | 33.4724 | 1 day |
| 32G bit Nand Flash 4Gx8 MLC | K9LBG08U0E-SCB0 | Samsung | 2000 | 0 | 1 day |
| 32G bit Nand Flash 4Gx8 MLC | H27UBG8T2ATR-BC | Hynix | 9600 | 35.1052 | 1 day |
| 32G bit Nand Flash 4Gx8 MLC | H27UBG8T2BTR-BC | Hynix | 11520 | 32.2478 | Stock HK |
| 32G bit Nand Flash 4Gx8 MLC | H27UBG8T2CTR-BC | Hynix | 30720 | 0 | 1 day |
| 32G bit Nand Flash 4Gx8 MLC | K9GBG08U0A-SCB0 | Samsung | 11520 | 32.2478 | Stock HK |
| 32G bit Nand Flash 4Gx8 MLC | K9GBG08U0M-LCB | Samsung | 2880 | 21.6346 | 1 day |
| 32G bit Nand Flash 4Gx8 MLC 25nm | MT29F32G08CBACAWP:C | Micron | 10000 | 0 | 1 day |
| 32G bit Nand Flash SLC | JS29F32G08CAND2 | Intel | 8000 | 63.6792 | Stock HK |
| 16G bit Nand Flash SLC | TH58NVG4S0DTG20 | Toshiba | 10000 | 0 | 1 day |
| 16G bit Nand Flash 2Gx8 SLC | K9WAG08U1D-SIB0 | Samsung | 4800 | 88.1712 | 1 day |
| 16G bit Nand Flash 2Gx8 SLC | K9WAG08U1D-SCB0 | Samsung | 5760 | 87.3548 | 1 day |
| 16G bit Nand Flash SLC | MT29F16G08ABABAWP:B | Micron | 5000 | 36.3298 | 1 day |
| 16G bit Nand Flash SLC Ind. Temp | MT29F16G08ABACAWP-IT:C | Micron | 0 | 2 days | |
| 16G bit Nand Flash MLC | JS29F16G08AAMD2 | Intel | 8000 | 25.3084 | Stock HK |
| 16G bit Nand Flash 2Gx8 SLC | JS29F16G08CANC1 | Intel | 4000 | 44.902 | Stock HK |
| 16G bit Nand Flash 2Gx8 MLC | K9GAG08U0D-PCB0 | Samsung | 0 | 3 days | |
| 16G bit Nand Flash 2Gx8 MLC | K9GAG08U0E-SCB0 | Samsung | 4800 | 39.1872 | 1 day |
| 16G bit Nand Flash 2Gx8 MLC | K9GAG08U0F-SCB0 | Samsung | 9600 | 0 | 1 day |
| 16G bit Nand Flash 2Gx8 MLC | H27UAG8T2BTR-BC | Hynix | 11520 | 22.451 | 1 day |
| 16G bit Nand Flash 2Gx8 MLC | H27UAG8T2CTR-BC | Hynix | 11520 | 21.2264 | 1 day |
| 16G bit Nand Flash 2Gx8 Wafer | K9GAG08U0D-W000 | Samsung | 50000 | 25.3084 | 1 day |
| 16G bit Nand Flash 2Gx8 MLC | K9GAG08U0M-PCB0 | Samsung | 2880 | 0 | 2 days |
| 16G bit Nand Flash | MT29F16G08CBACAWP:C | Micron | 20000 | 24.0838 | 1 day |
| 16G bit Nand Flash | MT29F16G08CBACAWP-IT:C | Micron | 1000 | 0 | 1 day |
| 8G bit Nand Flash 1Gx8 SLC | K9K8G08U0B-PIB0 | Samsung | 7680 | 46.1266 | 3 days |
| 8G bit Nand Flash 1Gx8 SLC Pb Free | K9K8G08U0D-SCB0 | Samsung | 3840 | 44.902 | Stock HK |
| 8G bit Nand Flash 1Gx8 SLC | K9K8G08U0D-SIB0 | Samsung | 4800 | 45.7184 | 1 day |
| 8G bit Nand Flash SLC | MT29F8G16ADADAH4-IT:D | Micron | 10000 | 57.148 | booking |
| 8G bit Nand Flash 1Gx8 SLC | MT29F8G08ABABAWP:B | Micron | 5000 | 43.2692 | 4 days |
| 8G bit Nand Flash Pb Free SLC | K9F8G08U0M-PCB0 | Samsung | 1000 | 0 | 2 days |
| 8G bit Nand Flash 1Gx8 MLC | HY27UT088G2A-TPCB | Hynix | 1900 | 0 | 1 day |
| 8G bit Nand Flash 1Gx8 MLC | HY27UT088G2M-TPCB | Hynix | 5760 | 0 | 3 days |
| 6G bit NAND/Mobile DDR SDRAM | MT29C4G48MAZAPAKQ-5 IT | Micron | 2000 | 71.8432 | booking |
| 4G bit Nand Flash 512Mx8 SLC | K9F4G08U0B-PIB0 | Samsung | 10000 | 0 | 3 days |
| 4G bit Nand Flash 512Mx8 SLC | K9F4G08U0B-PCB0 | Samsung | 5760 | 0 | 1 day |
| 4G bit Nand Flash 512Mx8 SLC | K9F4G08U0D-SCB0 | Samsung | 20000 | 23.2674 | 1 day |
| 4G bit Nand Flash Pb free SLC | MT29F4G08ABADAWP:D | Micron | 2000 | 0 | 3 days |
| 4G bit Nand Flash Pb free SLC | MT29F4G08ABADAWP-IT:D | Micron | 1000 | 35.1052 | 1 day |
| 2G bit Nand Flash 256Mx8 SLC | K9F2G08U0B-PCB0 | Samsung | 1920 | 23.6756 | 2 days |
| 2G bit Nand Flash 256Mx8 SLC | K9F2G08U0C-SCB0 | Samsung | 19200 | 14.6952 | 1 day |
| 2G bit Nand Flash 256Mx8 SLC Ind Temp TSOP | K9F2G08U0C-SIB0 | Samsung | 20160 | 16.328 | 3 days |
| 2G bit Nand Flash 256Mx8 SLC | HY27UF082G2B-TPCB | Hynix | 11520 | 17.1444 | 1 day |
| 2G bit Nand Flash 256Mx8 SLC | H27U2G8F2CTR-BC | Hynix | 11520 | 15.1034 | Stock HK |
| 2G bit Nand Flash (256M x 8) | MT29F2G08ABDHC-ET:D | Micron | 10000 | 18.369 | Stock HK |
| 2G bit Nand Flash | MT29F2G08ABAEAH4-IT:E | Micron | 4000 | 22.8592 | 1 day |
| 2G bit Nand Flash | MT29F2G08ABBEAHC-IT:E | Micron | 0 | booking | |
| 2G bit Nand Flash 256Mx8 SLC | MT29F2G08ABDWP-ET:D | Micron | 5000 | 11.8378 | 1 day |
| 1G bit Nand Flash | MT29F1G08ABADAWP:D | Micron | 4000 | 13.4706 | Stock HK |
| 1G bit Nand Flash | TC58NVG0S3ETA00 | Toshiba | 19200 | 10.12336 | 1 day |
| 1G bit Nand Flash 128Mx8 PB Free | K9F1G08U0C-PCB0 | Samsung | 3840 | 21.6346 | Stock HK |
| 1G bit Nand Flash 128Mx8 PB Free | K9F1G08U0D-SCB0 | Samsung | 11520 | 10.205 | 1 day |
| 1G bit Nand Flash 128Mx8 TSOP1 Ind Temp | K9F1G08U0D-SIB0 | Samsung | 9600 | 11.4296 | Stock HK |
| 1G bit Nand Flash 128Mx8 SLC | HY27UF081G2A-TPCB | Hynix | 11520 | 13.0624 | 2 days |
| 1G bit Nand Flash 128Mx8 SLC | H27U1G8F2BTR-BC | Hynix | 19200 | 11.4296 | 3 days |
| 1G bit Nand Flash | MT29F1G08ABADAWP-IT:D | Micron | 10000 | 14.6952 | 3 days |
| 512M bit Nand Flash 64Mx8 SLC Pb Free | K9F1208U0C-PCB0 | Samsung | 1920 | 30.37008 | 1 day |
| 512M bit Nand Flash | H27U518S2CTP-BC | Hynix | 960 | 13.0624 | Stock HK |
| 512M bit Nand Flash | H27U518S2CTR-BC | Hynix | 11520 | 11.4296 | 2 days |
| 512M bit Nand Flash Memory SLC | K9F1208U0C-PIB0 | Samsung | 1000 | 36.3298 | 1 day |
| 256M bit Nand Flash 32Mx8 SLC | K9F5608U0D-JIB0 | Samsung | 3840 | 12.246 | Stock HK |
| 256M bit Nand Flash 1.8v FBGA Ind Temp | K9F5608R0D-JIB0 | Samsung | 30000 | 0 | 3 days |
| 256M bit Nand Flash 32Mx8 SLC | HY27US08561A-TPCB | Hynix | 6720 | 8.5722 | Stock HK |
| 128M bit Nand Flash 16Mx8 SLC | HY27US08281A-TPCB | Hynix | 50000 | 0 | 1 day |
| 32M bit Flash memory | M29W320DB70N6E | Numonyx | 20000 | 9.7968 | booking |
| 1G bit Nand Flash BGA | NAND01GW3B2CZA6E | Numonyx | 10000 | 17.5526 | Stock HK |
| 1Gbit Flash Memory | JS28F00AP33BFA | Numonyx | 1000 | 0 | Stock |
| 512Mbit Flash Memory | S29GL512P11FFI010 | Spansion | 0 | booking | |
| 256Mbit Flash Memory ( Strata Flash) | JS28F256J3F-105A | Numonyx | 576 | 0 | 5 days |
| 256Mbit Flash memory | JS28F256M29EWH | Intel | 576 | 0 | 3 days |
| 256M Nor Flash Memory | S29GL256P10FFI010 | Spansion | 3600 | 20.41 | Stock |
| 128Mbit NOR Flash Memory | S29GL128P90TFIR10 | Spansion | 9100 | 0 | 3 days |
| 128Mbit NOR Flash Memory | S29GL128P11TFIV20 | Spansion | 1820 | 12.246 | booking |
| 128Mbit NOR Flash Memory | S29GL128S90TFI020 | Spansion | 9100 | 11.4296 | 7 days |
| 128Mbit Flash Memory | M25P128-VMF6TPB | Numonyx | 2000 | 0 | 3 days |
| 64Mbit Flash Memory | S29JL064J70TFI000 | Spansion | 5760 | 0 | 3 days |
| 32Mbit Flash Memory 56TSOP | JS28F320J3F-75A | Numonyx | 2880 | 0 | 1 day |
| 1Mbit SPI FLASH MEMORY | W25X10CLSNIG | Winbond | 50000 | 0 | booking |
| 32Mbit Flash Memory | M28W320FCB70ZB6F | Micron | 5000 | 15.5116 | booking |
| 16Mbit NOR Flash Memory | S29AL016J70TFI020 | Spansion | 30000 | 4.4902 | 6 days |
| 8Mbit Flash Memory | S29AL008J70TFI020 | Spansion | 9600 | 4.082 | 3 days |
| 128Mbit Flash Memory | M29W128GL70N6E | Micron | 1728 | 15.1034 | 1 day |
| 128Mbit Flash memory | JS28F128J3F-75A | Micron | 2304 | 27.7576 | 2 days |
| SRAM 256Kx16 Pb free | K6R4008C1D-UI10 | Samsung | 10000 | 18.7772 | 2 days |
| Async Fast SRAM 256kx16 Pb Free | K6R4016V1D-KI10 | Samsung | 10000 | 0 | 2 days |
| SRAM 512kx8 SOP Pb Free | K6X4008C1F-BF55000 | Samsung | 1000 | 0 | 1 day |
| Async Fast SRAM 256kx16 Pb Free | K6R4016V1D-UI10 | Samsung | 1500 | 24.492 | 3 days |
| SRAM 256kx16 | CY7C1041DV33-10ZSXI | Cypress | 2375 | 0 | 3 days |
| EEPROM | FMD/FT24C02A-USR-T | FMD | 5000 | 0.57148 | booking |
| Two-wire Serial EEPROM | AT24C256C-SSHL-T | Atmel | 4000 | 1.30624 | 4 days |
| MCP | K511F12ACA-B075 | Samsung | 20000 | 20.0018 | 2 days |
| MCP | K522H1HACM-B050 | Samsung | 5600 | 0 | 2 days |
| MCP | MT29C2G24MAAAAKAMD-5IT | Micron | 10000 | 32.656 | booking |
| MCP 8G Nand 512Mx16 + 4G mDDR 64Mx32 | KBY00U00VA-B450 | Samsung | 10000 | 0 | 2 days |
| 4GB e-MMC | KLM4G1FE3B-B001 | Samsung | 1000 | 39.1872 | 1 day |
| 2GB e-MMC | KLM2G1HE3F-B001 | Samsung | 11200 | 0 | 2 days |
| 16GB eMMC | KLMAG2GE4A-A001 | Samsung | 5000 | 118.378 | 2 days |
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