可编程开关频率CXSD62183内置自动PFM/PWM模式固定1MHz开关频率热关机功能

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1.产品概述       2.产品特点     8eI嘉泰姆

3.应用范围       4.技术规格书下载（PDF文档）8eI嘉泰姆

5.产品封装       6.电路原理图  8eI嘉泰姆

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   产品概述 返回TOP8eI嘉泰姆

The CXSD62183 integrates two synchronous buck PWM controller and high/low side power MOSFETs to generate VPP and VDDQ, two sourcing and sinking LDO linear regulator to generate VTT and VTTREF. It provides a complete power supply for DDR4 memory system. It offers the lowest total solution cost in system where space is at a premium. The CXSD62183 provides excellent transient response and accurate DC voltage output in PFM Mode. In Pulse Frequency Mode (PFM), the CXSD62183 provides very high efficiency over light to heavy loads with loadingmodulated switching frequencies. The CXSD62183 has maximum power indicator function in order to prevent over load condition. The device also has single enable for VPP and VDDQ with JEDEC sequence implemented. Moreover, the CXSD62183 integrates SMBus controller to program VDDQ output voltage, VDDQ DAC voltage adjustment, VDDQ voltage slew rate setting, and VDDQ PWM converter frequency. The CXSD62183 is equipped with accurate current-limit, output under-voltage, output over-voltage and over-temperature protections. A Power-On- Reset function monitors the voltage on VCC prevents wrong operation during power on

   产品特点 返回TOP8eI嘉泰姆

Provide 4 Independent Outputs for VPP, VDDQ, VTT LDO andVTTREFLDO VDDQ Converter 8eI嘉泰姆

· High Input Voltages Range from 4.5V to 25V Input Power 8eI嘉泰姆

· Provide 1.2V (DDR4) or Adjustable Output Voltage Max to 1.8V by SMBus Control - +1% Accuracy over Temperature 8eI嘉泰姆

· HighEfficiencyPerformance up to 90%scale & Low Shutdown Current<1uA 8eI嘉泰姆

· Integrated High_Side N-Channel MOSFET 20mW and Low_Side N-Channel MOSFET 7mW@ VCC=5V 8eI嘉泰姆

· Integrated Bootstrap Forward P-CH MOSFET 8eI嘉泰姆

· Built in Internal Soft-Start: 0.6ms(typ.) and SoftStop Functions for PWM Output 8eI嘉泰姆

· Built In Automatic PFM/PWM Mode Selection 8eI嘉泰姆

· Programmable Switching Frequency 8eI嘉泰姆

· S3 and S5 Pins Control The Device in S0, S3 or S4/ S5 State 8eI嘉泰姆

· Built In PMAX Signal for Total Power Indicator · Power Good Monitoring · 60% Under-Voltage Protection (UVP) 8eI嘉泰姆

· 125% Over-Voltage Protection (OVP) 8eI嘉泰姆

· Built in Fixed Valley Current Limit Protection 8eI嘉泰姆

· Built In Thermal Shutdown Function 8eI嘉泰姆

· VPP Converter 8eI嘉泰姆

· Integrated High_Side P-Channel MOSFET 220mW and Low_Side N-Channel MOSFET 200mW @ VCC=5V 8eI嘉泰姆

· Excellent Reference Voltage = 0.6V - +1% Load/Line Regulations over all TC range 8eI嘉泰姆

· Fixed 1MHz switching Frequency 8eI嘉泰姆

· Built in Internal Soft-Start: 0.35ms(typ.) and SoftStop Functions for PWM Output 8eI嘉泰姆

· 60% Under-Voltage Protection (UVP) 8eI嘉泰姆

· 125% Over-Voltage Protection (OVP)8eI嘉泰姆

· Built in Fixed Valley Current Limit Protection 8eI嘉泰姆

· Built In Thermal Shutdown Function +0.75A LDO Section (VTT) 8eI嘉泰姆

· Support Only 10mF MLCC for Stability on VTT LDO 8eI嘉泰姆

· VTT and VTTREF Track at Halfthe VDDQ byinternal divider 8eI嘉泰姆

· Built In 0.75A Source/Sink Capability on VTT LDO and 10mA Source/Sink Capability on VTTREF LDO 8eI嘉泰姆

· Independent Current Limit Protection 8eI嘉泰姆

· Thermal Shutdown Protection 8eI嘉泰姆

· 4mmx4mm 26-pin package (TQFN-26) 8eI嘉泰姆

· HalogenandLeadFreeAvailable (RoHSCompliant)8eI嘉泰姆

   应用范围 返回TOP8eI嘉泰姆

· DDR3 and DDR4 Memory Power Supplies 8eI嘉泰姆

· NB/MB/Tablet8eI嘉泰姆

   技术规格书（产品PDF) 返回TOP 8eI嘉泰姆

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