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目录sBR嘉泰姆

1.产品概述                       2.产品特点sBR嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 sBR嘉泰姆
5.产品封装图                     6.电路原理图                   sBR嘉泰姆
7.功能概述                        8.相关产品sBR嘉泰姆

一,产品概述(General Description)      sBR嘉泰姆

          The CXSD6289 has two synchronous buck PWM control-lers with highsBR嘉泰姆
precision internal references voltage to of-fer accurate outputs. The PWMsBR嘉泰姆
controllers are designed to drive two N-channel MOSFETs in synchronoussBR嘉泰姆
buck topology. The device requires 12V and 5V power supplies.If the 5VsBR嘉泰姆
supply is not available, the device can offer an optional shunt regulatorsBR嘉泰姆
5.8V for 5V supply.Both outputs have independent soft-start and enablesBR嘉泰姆
func-tions combined on the SS/EN pin. Connecting a capaci-tor from eachsBR嘉泰姆
SS/EN pin to the ground for setting the soft-start time, and pulling the SS/ENsBR嘉泰姆
pin voltage below 1V to disable regulator. The device also offers 180°phasesBR嘉泰姆
shift function between OUT1 and OUT2.The default switching frequency issBR嘉泰姆
300kHz (keep the FS pin open or short to GND), and the device also providessBR嘉泰姆
the programmable switching frequency function to ad-just the switching frequencysBR嘉泰姆
from 70kHz to 800kHz. Con-necting a resistor from FS pin to GND increases thesBR嘉泰姆
switching frequency. Conversely, connecting a resistor from FS pin to VCC12sBR嘉泰姆
decreases the switching frequency.There is no current sensing or under-voltagesBR嘉泰姆
sensing on the CXSD6289. However, it provides a simple short-circuit protection by monitoring the COMP1 pin and COMP2 pin for over-voltage. When any of two pinssBR嘉泰姆
exceed their trip point and the condition keeps for 1-2 internal clock cycles (3-6us atsBR嘉泰姆
300kHz), all regulators are latched off.sBR嘉泰姆
二.产品特点(Features)sBR嘉泰姆

1.)Two Synchronous Buck Converters(OUT1,OUT2)sBR嘉泰姆
2.)Converter Input Voltage Range up to 12VsBR嘉泰姆
3.)0.6V Reference for OUT1 with 0.8% AccuracysBR嘉泰姆
4.)3.3V Reference for OUT2 with 0.8% AccuracysBR嘉泰姆
5.)Both Outputs have Independent Soft-Start andsBR嘉泰姆
    Enable FunctionssBR嘉泰姆
6.)Internal 300kHz Oscillator and ProgrammablesBR嘉泰姆
    Frequency Range from 70 kHz to 800kHzsBR嘉泰姆
7.)180 Degrees Phase Shift etween OUT1 and OUT2sBR嘉泰姆
8.)Short-Circuit ProtectionsBR嘉泰姆
9.)Thermally Enhanced SOP-20 PackagesBR嘉泰姆
10.)Lead Free and Green Devices AvailablesBR嘉泰姆
(RoHS Compliant)sBR嘉泰姆
三,应用范围 (Applications)sBR嘉泰姆

Graphic CardssBR嘉泰姆
Low-Voltage Distributed Power SuppliessBR嘉泰姆
SMPS ApplicationsBR嘉泰姆
四.下载产品资料PDF文档 sBR嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！sBR嘉泰姆

 sBR嘉泰姆

五,产品封装图 (Package)sBR嘉泰姆
sBR嘉泰姆

六.电路原理图sBR嘉泰姆

sBR嘉泰姆
七,功能概述sBR嘉泰姆

Output Inductor Selection (Cont.)sBR嘉泰姆
Where Fs is the switching frequency of the regulator. Al-though increase the inductor value and frequencysBR嘉泰姆
reduce the ripple current and voltage, but there is a tradeoff ex-ists between the inductor’s ripple current andsBR嘉泰姆
the regula-tor load transient response time.A smaller inductor will give the regulator a faster load transientsBR嘉泰姆
response at the expense of higher ripple current.Increasing the switching frequency (FS) also reduces thesBR嘉泰姆
ripple current and voltage, but it will increase the switch-ing loss of the MOSFET and the power dissipationsBR嘉泰姆
of the converter. The maximum ripple current occurs at the maximum input voltage. A good starting point issBR嘉泰姆
to choose the ripple current to be approximately 30% of the maxi-mum output current.Once the inductancesBR嘉泰姆
value has been chosen, select an inductor that is capable of carrying the required peak cur-rent without goingsBR嘉泰姆
into saturation. In some types of inductors, especially core that is made of ferrite, the ripple current will increasesBR嘉泰姆
abruptly when it saturates. This will result in a larger output ripple voltage.sBR嘉泰姆
Output Capacitor SelectionsBR嘉泰姆
Higher Capacitor value and lower ESR reduce the output ripple and the load transient drop. Therefore select highsBR嘉泰姆
performance low ESR capacitors that are intended for switching regulator applications. In some applications,sBR嘉泰姆
multiple capacitors have to be parallel to achieve the de-sired ESR value. A small decoupling capacitor in parallelsBR嘉泰姆
for bypassing the noise is also recommended, and the voltage rating of the output capacitors are also must besBR嘉泰姆
considered. If tantalum capacitors are used, make sure they are surge tested by the manufactures. If in doubt,sBR嘉泰姆
consult the capacitors manufacturer.sBR嘉泰姆
Input Capacitor SelectionsBR嘉泰姆
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, sBR嘉泰姆

select the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage.sBR嘉泰姆
The maximum RMS current rating requirement is approxi-mately IOUT/2, where IOUT is the load current. sBR嘉泰姆

During power up, the input capacitors have to handle large amount of surge current. If tantalum capacitors sBR嘉泰姆

are used, make sure they are surge tested by the manufactures. If in doubt, consult the capacitors sBR嘉泰姆

manufacturer. For high frequency decoupling, a ceramic capacitor 1uF can be connected between the sBR嘉泰姆

drain of upper MOSFET and the source of lower MOSFET. sBR嘉泰姆
MOSFET SelectionsBR嘉泰姆
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reverse transfer sBR嘉泰姆

capacitance (CRSS) and maximum output current requirement. The losses in the MOSFETs have sBR嘉泰姆

two components: conduction loss and transition loss. For the upper and lower MOSFET, the sBR嘉泰姆

losses are approximately given by the following :sBR嘉泰姆
PUPPER=IOUT(1+TC)(RDS(ON))D+(0.5)(IOUT)(VIN)(tSW)FSsBR嘉泰姆
PLOWER=IOUT(1+TC)(RDS(ON))(1-D)sBR嘉泰姆
Where I is the load current OUT TC is the temperature dependency of RDS(ON) F is the switchingsBR嘉泰姆

 frequency St is the switching interval sw D is the duty cycle Note that both MOSFETs have sBR嘉泰姆

conduction losses while the upper MOSFET include an additional transition loss.The switching sBR嘉泰姆

internal, tsw, is a function of the reverse transfer capacitance CRSS. The (1+TC) term is to sBR嘉泰姆

factor in the temperature depen-dency of the RDS(ON) and can be extracted from the “RDS(ON)sBR嘉泰姆
vs Temperature” curve of the power MOSFET.sBR嘉泰姆
Short Circuit ProtectionsBR嘉泰姆
The CXSD6289 provides a simple short circuit protection function, and it is not easy to predict itssBR嘉泰姆

 performance, since many factors can affect how well it works. Therefore, the limitations and sBR嘉泰姆

suggestions of this method must be pro-vided for users to understand how to work it well.ThesBR嘉泰姆

 short circuit protection was not designed to work for the output in initial short condition. In this sBR嘉泰姆

case, the short circuit protection may not work, and damage the MOSFETs. If the circuit still works,sBR嘉泰姆

 remove the short can cause an inductive kick on the phase pin, and it may damage the IC and sBR嘉泰姆

MOSFETs.  If the resistance of the short is not low enough to cause protection, the regulator willsBR嘉泰姆

 work as the load hassBR嘉泰姆

Short Circuit Protection (Cont.)sBR嘉泰姆
increased, and continue to regulate up until the MOSFETs is damaged. The resistance of the shortsBR嘉泰姆

 should include wiring, PCB traces, contact resistances, and all of the return paths.The higher duty sBR嘉泰姆

cycle will give a higher COMP voltage level, and it is easy to touch the trip point. The compensa-sBR嘉泰姆
tion components also affect the response of COMP voltage; smaller caps may give a faster response.sBR嘉泰姆
The output current has faster rising time during short;the COMP pin will have a sharp rise. However,sBR嘉泰姆

 if the cur-rent rises too fast, it may cause a false trip. The output capacitance and its ESR can affectsBR嘉泰姆

 the rising time of the current during short.sBR嘉泰姆

八,相关产品                 更多同类产品......sBR嘉泰姆

◀ 上一篇:CXSD6288双通道恒定时间和同步的PWM控制器每个通道驱动双N通道MOSFET功率因数调制或脉宽调制模式下瞬态响应和精确的直流电压输出

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