首页 > 产品中心 > 功率器件 > P沟道MOSFETs >MOSFET for LED Screen HV BJT (LED屏专用MOS HV BJT):CXMS5210 CXMS5211 CXMS5212 CX13003T CX13003TZ
MOSFET for LED Screen HV BJT (LED屏专用MOS HV BJT):CXMS5210 CXMS5211 CXMS5212 CX13003T CX13003TZ
17
MOSFET for LED Screen HV BJT (LED屏专用MOS HV BJT):CXMS5210 CXMS5211 CXMS5212 CX13003T CX13003TZ
产品手册
-
[ CXMS5212 ]
样品申请
产品简介
|
MOSFET for LED Screen &HV BJT (LED屏专用MOS&HV BJT) |
|||||||
|
Part Number |
Mode |
VDS(Max) |
VGS |
ID(Max) |
RDS(on) |
Features |
Package |
|
(Max) |
|||||||
|
P channel |
-30V |
-20V |
-5.7A |
57mΩ |
Full-color |
SOP8 |
|
|
Double P |
-30V |
-20V |
-6A |
53mΩ |
Full-color |
SOP8 |
|
|
Double P |
-20V |
-12V |
-6A |
80mΩ |
Single-color |
SOP8 |
|
|
Part Number |
Mode |
VCBO |
VCEO |
IC |
IB |
Features |
Package |
|
BJT |
700V |
450V |
1A |
0.75A |
The following 6W Power |
TO-92 |
|
|
BJT |
700V |
450V |
1.5A |
0.75A |
The following 10W Power |
TO-126 |
|
◀ 上一篇:CXMS5211 CXMS5219SG系列双P沟道增强型场效应晶体管采用高密度DMOS沟道技术制造用于减小通态电阻特别适合低电压超低导通电阻高密度电池设计
下一篇▶:CXMS5214 CXMS5214-N系列P沟道增强型场效应晶体管采用高密度DMOS沟道技术制造用于最小化导通电阻适合于低压应用低功耗低功耗超低导通电阻高密度电池设计
发表评论
| 热门信息 |
|---|
| 最新信息 |
|---|
| 推荐信息 |
|---|
