目录fSZ嘉泰姆

1.产品概述                       2.产品特点fSZ嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 fSZ嘉泰姆
5.产品封装图                     6.电路原理图                   fSZ嘉泰姆
7.功能概述                        8.相关产品fSZ嘉泰姆

一,产品概述(General Description)  fSZ嘉泰姆

    The CXSD62121A CXSD62121B CXSD62121 integrates a synchronous buck PWM con-troller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It offers the lowest total solution cost in system where space is at a premium.  The CXSD62121A CXSD62121B CXSD62121 provides excellent transient response and accurate DC voltage output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM), the CXSD62121A CXSD62121B CXSD62121 provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN-20 Package,the Forced PWM Mode works nearly at constant frequency for low-noise requirements.  The CXSD62121A CXSD62121B CXSD62121 is equipped with accurate current-limit,output under-voltage, and output over-voltage protections.A Power-On- Reset function monitors the voltage on VCC prevents wrong operation during power on. Droop func-tion is allowed to adjust output voltage during light load period.The LDO is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current up to 1.5A. It also incorporates current-limit and thermal shutdown protection.The output voltage of LDO tracks the voltage at VREF pin.An internal resistor divider is used to provide a half volt-age of VREF for VTTREF and VTT Voltage. The VTT output voltage is only requiring 20μF of ceramic output capaci tance for stability and fast transient response. The S3 and S5 pins provide the sleep state for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 and S3 are both pulled low the device provides the soft-off for VTT and VTTREF                                                         fSZ嘉泰姆

产品特点(Features)fSZ嘉泰姆

High Input Voltages Range from 3V to 28V Input PowerfSZ嘉泰姆
Provide Adjustable Output Voltage from 0.75V tofSZ嘉泰姆
5.5V +1% Accuracy over TemperaturefSZ嘉泰姆
Integrated MOSFET Drivers and Bootstrap Forward P-CH MOSFETfSZ嘉泰姆
Low Quiescent Current (200μA)fSZ嘉泰姆
Excellent Line and Load Transient ResponsesfSZ嘉泰姆
PFM Mode for Increased Light Load EfficiencyfSZ嘉泰姆
Constant On-Time Controller SchemefSZ嘉泰姆
- Switching Frequency Compensation for PWM ModefSZ嘉泰姆
- Adjustable Switching Frequency from 100kHz tofSZ嘉泰姆
550kHz in PWM Mode with DC Output CurrentfSZ嘉泰姆
S3 and S5 Pins Control The Device in S0, S3 or S4/S5 StatefSZ嘉泰姆
Power Good MonitoringfSZ嘉泰姆
Extra Droop Voltage Control Function withfSZ嘉泰姆
Adjustable Current SettingfSZ嘉泰姆
70% Under-Voltage Protection (UVP)fSZ嘉泰姆
125% Over-Voltage Protection (OVP)fSZ嘉泰姆
Adjustable Current-Limit ProtectionfSZ嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)fSZ嘉泰姆
TQFN-20 3mmx3mm Thin packagefSZ嘉泰姆
Lead Free Available (RoHS Compliant)fSZ嘉泰姆
+1.5A LDO Section (VTT)fSZ嘉泰姆
Sourcing or Sinking Current up to 1.5AfSZ嘉泰姆
Fast Transient Response for Output VoltagefSZ嘉泰姆
Output Ceramic Capacitors Support at least 10μF MLCCfSZ嘉泰姆
VTT and VTTREF Track at Half the VDDQSNS by internal dividerfSZ嘉泰姆
+20mV Accuracy for VTT and VTTREFfSZ嘉泰姆
Independent Over-Current Limit (OCL)fSZ嘉泰姆
Thermal Shutdown ProtectionfSZ嘉泰姆
三,应用范围 (Applications)fSZ嘉泰姆

DDR2, and DDR3 Memory Power SuppliesfSZ嘉泰姆
SSTL-2 SSTL-18 and HSTL TerminationfSZ嘉泰姆
四.下载产品资料PDF文档 fSZ嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！fSZ嘉泰姆

 fSZ嘉泰姆

五,产品封装图 (Package)fSZ嘉泰姆

fSZ嘉泰姆
六.电路原理图fSZ嘉泰姆

fSZ嘉泰姆

七,功能概述fSZ嘉泰姆

Soft- Start (cont.)fSZ嘉泰姆

During soft-start stage before the PGOOD pin is ready,fSZ嘉泰姆
the under voltage protection is prohibited. The over volt-fSZ嘉泰姆
age and current limit protection functions are enabled. IffSZ嘉泰姆
the output capacitor has residue voltage before startup,fSZ嘉泰姆
both low-side and high-side MOSFETs are in off-statefSZ嘉泰姆
until the internal digital soft start voltage equal the inter-fSZ嘉泰姆
nal feedback voltage. This will ensure the output voltagefSZ嘉泰姆
starts from its existing voltage level.fSZ嘉泰姆
The VTT LDO part monitors the output current, both sourc-fSZ嘉泰姆
ing and sinking current, and limits the maximum outputfSZ嘉泰姆
current to prevent damages during current overload orfSZ嘉泰姆
short circuit (shorted from VTT to GND or VLDOIN)fSZ嘉泰姆
conditions.fSZ嘉泰姆
The VTT LDO provides a soft-start function, using thefSZ嘉泰姆
constant current to charge the output capacitor that givesfSZ嘉泰姆
a rapid and linear output voltage rise. If the load current isfSZ嘉泰姆
above the current limit start-up, the VTT cannot startfSZ嘉泰姆
successfully.CXSD62121A CXSD62121B CXSD62121 has an independent counter for each output,fSZ嘉泰姆
but the PGOOD signal indicates only the status of VDDQfSZ嘉泰姆
and does not indicate VTT power good externally.fSZ嘉泰姆
Power-Good Output (PGOOD)fSZ嘉泰姆
PGOOD is an open-drain output and the PGOOD com-fSZ嘉泰姆
parator continuously monitors the output voltage. PGOODfSZ嘉泰姆
is actively held low in shutdown, and standby. When PWMfSZ嘉泰姆
converter’s output voltage is greater than 95% of its tar-fSZ嘉泰姆
get value, the internal open-drain device will be pulledfSZ嘉泰姆
low. After 63μs debounce time, the PGOOD goes high.fSZ嘉泰姆
The PGOOD goes low if VVDDQ output is 10% below orfSZ嘉泰姆
above its nominal regulation point.fSZ嘉泰姆
Under Voltage ProtectionfSZ嘉泰姆
In the process of operation, if a short-circuit occurs, thefSZ嘉泰姆
output voltage will drop quickly. When load current is big-fSZ嘉泰姆
ger than current limit threshold value, the output voltagefSZ嘉泰姆
will fall out of the required regulation range. The under-fSZ嘉泰姆
voltage continually monitors the setting output voltagefSZ嘉泰姆
after 2ms of PWM operations to ensure startup. If a loadfSZ嘉泰姆
step is strong enough to pull the output voltage lowerfSZ嘉泰姆
than the under voltage threshold (70% of normal outputfSZ嘉泰姆
voltage), CXSD62121A CXSD62121B CXSD62121 shuts down the output gradually andfSZ嘉泰姆
latches off both high and low side MOSFETs.fSZ嘉泰姆
Over Voltage Protection (OVP)fSZ嘉泰姆
The feedback voltage should increase over 125% of thefSZ嘉泰姆
reference voltage due to the high-side MOSFET failure orfSZ嘉泰姆
for other reasons, and the over voltage protection com-fSZ嘉泰姆
parator designed with a 1.5μs noise filter will force thefSZ嘉泰姆
low-side MOSFET gate driver to be high. This action ac-fSZ嘉泰姆
tively pulls down the output voltage and eventually at-fSZ嘉泰姆
tempts to blow the battery fuse.fSZ嘉泰姆
When the OVP occurs, the PGOOD pin will pull down andfSZ嘉泰姆
latch-off the converter. This OVP scheme only clamps thefSZ嘉泰姆
voltage overshoot, and does not invert the output voltagefSZ嘉泰姆
when otherwise activated with a continuously high outputfSZ嘉泰姆
from low-side MOSFET driver. It’s a common problem forfSZ嘉泰姆
OVP schemes with a latch. Once an over-voltage faultfSZ嘉泰姆
condition is set, toggling VCC power-on-reset signal canfSZ嘉泰姆
only reset it.fSZ嘉泰姆
PWM Converter Current LimitfSZ嘉泰姆
The current-limit circuit employs a unique “valley” currentfSZ嘉泰姆
sensing algorithm (Figure 2). CS pin should be con-fSZ嘉泰姆
nected to VCC through the trip voltage-setting resistor,fSZ嘉泰姆
RCS. CS terminal sinks 5mA current, ICS, and the currentfSZ嘉泰姆
limit threshold is set to the voltage across the RCS. ThefSZ嘉泰姆
voltage between or CS_GND pin and PHASE pin moni-fSZ嘉泰姆
tors the inductor current so that PHASE pin should befSZ嘉泰姆
connected to the drain terminal of the low side MOSFET.fSZ嘉泰姆
PGND is used as the positive current sensing node sofSZ嘉泰姆
that PGND should be connected to the proper currentfSZ嘉泰姆
sensing device, i.e. the sense resistor or the source ter-fSZ嘉泰姆
minal of the low side MOSFET.fSZ嘉泰姆
If the magnitude of the current-sense signal is above thefSZ嘉泰姆
current-limit threshold, the PWM is not allowed to initiatefSZ嘉泰姆
a new cycle. The actual peak current is greater than thefSZ嘉泰姆
current-limit threshold by an amount equal to the induc-fSZ嘉泰姆
tor ripple current. Therefore, the exact current- limit char-fSZ嘉泰姆
acteristic and maximum load capability are a function offSZ嘉泰姆
the sense resistance, inductor value, and input voltage.fSZ嘉泰姆
八,相关产品               更多同类产品...... fSZ嘉泰姆

共有条评论 用户名: 密码: 验证码: 匿名发表